MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance

-60V – -36A – P-channel Power MOS FET Application : Automotive

Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 29.5 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 37.5 m Max. ( VGS = -4.5 V, ID = -18 A )  Low input capacitance : Ciss

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -36A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 30mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFETs for Automotive

The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. • Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A)\n• Low input capacitance Ciss = 3100 pF TYP.;

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance

SWITCHING P-CHANNEL POWER MOS FET

文件：297.38 Kbytes Page：9 Pages

SWITCHING P-CHANNEL POWER MOS FET

文件：297.38 Kbytes Page：9 Pages

SWITCHING P-CHANNEL POWER MOS FET

文件：297.38 Kbytes Page：9 Pages

MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOSFET

DESCRIPTION The NP36P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 40 mΩ MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance Ci

-60V – -36A – P-channel Power MOS FET Application : Automotive

Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 30 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 40 m Max. ( VGS = -4.5 V, ID = -18 A )  Low input capacitance : Ciss = 32

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -36A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 30mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.