位置：首页 > IC中文资料第10204页 > NP36P06KDG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP36P06KDG | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance | NEC 瑞萨 |   | |
NP36P06KDG | -60V – -36A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance : RDS(on) = 29.5 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 37.5 m Max. ( VGS = -4.5 V, ID = -18 A ) Low input capacitance : Ciss | RENESAS 瑞萨 | | |
NP36P06KDG | isc P-Channel MOSFET Transistor FEATURES ·Drain Current -ID= -36A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 30mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
NP36P06KDG | Power MOSFETs for Automotive | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance | NEC 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET 文件：297.38 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET 文件：297.38 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET 文件：297.38 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
-60V – -36A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance : RDS(on) = 30 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 40 m Max. ( VGS = -4.5 V, ID = -18 A ) Low input capacitance : Ciss = 32 | RENESAS 瑞萨 | | ||
isc P-Channel MOSFET Transistor FEATURES ·Drain Current -ID= -36A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 30mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |
NP36P06KDG产品属性
- 类型
描述
- 型号
NP36P06KDG
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS/瑞萨 |
22+ |
TO-263 |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
RENESAS/瑞萨 |
24+ |
TO-263 |
60000 |
全新原装现货 |
|||
RENESAS/瑞萨 |
21+ |
TO-263 |
10000 |
原装现货假一罚十 |
|||
RENESAS/瑞萨 |
23+ |
TO-263 |
89630 |
当天发货全新原装现货 |
|||
NEC |
2023+ |
TO263-2 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
50000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
08+ |
TO263-2 |
1472 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
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DdatasheetPDF页码索引
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