MOS FIELD EFFECT TRANSISTOR

Product Scout Automotive

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -20A@ TC=25℃ ·Drain Source Voltage -VDSS= -40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 48mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFETs for Automotive

SWITCHING P-CHANNEL POWER MOSFET

文件：307.49 Kbytes Page：9 Pages

P-Channel 60-V (D-S) MOSFET

文件：988.13 Kbytes Page：8 Pages

MOS FIELD EFFECT TRANSISTOR

Product Scout Automotive

MOS FIELD EFFECT TRANSISTOR

Product Scout Automotive

SWITCHING P-CHANNEL POWER MOSFET

文件：307.49 Kbytes Page：9 Pages

P-Channel 60-V (D-S) MOSFET

文件：988.16 Kbytes Page：8 Pages

SWITCHING P-CHANNEL POWER MOSFET

文件：307.49 Kbytes Page：9 Pages

P-Channel 60-V (D-S) MOSFET

文件：988.15 Kbytes Page：8 Pages

SWITCHING P-CHANNEL POWER MOSFET

文件：307.49 Kbytes Page：9 Pages

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -15A, RDS(ON) =105mΩ @VGS = -10V. RDS(ON) =150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -14A, RDS(ON) =125mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =175mW @VGS = -4.5V. Lead free product is acquired.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -13A, RDS(ON) = 105mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

P-Channel 60-V (D-S) MOSFET

文件：988.36 Kbytes Page：8 Pages

P-Channel Enhancement Mode Field Effect Transistor

文件：441.65 Kbytes Page：4 Pages