MOS FIELD EFFECT TRANSISTOR

Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) • Designed for automotive applicati

MOS FIELD EFFECT TRANSISTOR

Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V)  Designed for automotive applicatio

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.75mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Nch Single Power MOSFET 55V 110A 1.75mohm MP-25ZP/TO-263 Automotive

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages

MOS FIELD EFFECT TRANSISTOR

Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V)  Designed for automotive applicatio

MOS FIELD EFFECT TRANSISTOR

Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V)  Designed for automotive applicatio

MOS FIELD EFFECT TRANSISTOR

Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) • Designed for automotive applicati

MOS FIELD EFFECT TRANSISTOR

Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) • Designed for automotive applicati

MOS FIELD EFFECT TRANSISTOR

Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V)  Designed for automotive applicatio

MOS FIELD EFFECT TRANSISTOR

文件：122.05 Kbytes Page：8 Pages

PolarHT Power MOSFET

PolarHT™ Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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N-Channel Enhancement Mode Avalanche Rated

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isc N-Channel MOSFET Transistor

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