isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Product Scout Automotive

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SWITCHING N-CHANNEL POWER MOS FET

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PolarHT Power MOSFET

PolarHT™ Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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N-Channel Enhancement Mode Avalanche Rated

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isc N-Channel MOSFET Transistor

文件：306.33 Kbytes Page：2 Pages