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NP1价格

参考价格：￥151.9980

型号：NP1.2-12 品牌：Alarm Suppliers 备注：这里有NP1多少钱，2024年最近7天走势，今日出价，今日竞价，NP1批发/采购报价，NP1行情走势销售排行榜，NP1报价。
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NP1

Packing List Envelopes

文件：15.17 Kbytes Page：2 Pages

3MMinnesota Mining and Manufacturing

明尼苏达矿务明尼苏达矿务及制造业公司

3M
NP100N04MDH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP100N04MUH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP100N04NDH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP100N04NUH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP100N04NUJ

MOS FIELD EFFECT TRANSISTOR

Description TheNP100N04NUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance ⎯RDS(on)=3.0mΩMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=5600pFTYP.(VDS=25V,VGS=0V) •Highcurrentrating:ID

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N04NUJ

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP100N04NUJ.S18-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP100N04NUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance ⎯RDS(on)=3.0mΩMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=5600pFTYP.(VDS=25V,VGS=0V) •Highcurrentrating:ID

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N04PDH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP100N04PUH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.1mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP100N04PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4700pFTYP.(VDS=25V) •Designedforautomotiveapplicat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N04PUK

MOS FIELD EFFECT TRANSISTOR

Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=2.3mMAX.(VGS=10V,ID=50A) ･LowCissCiss=4700pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N04PUK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP100N04PUK_V01

MOS FIELD EFFECT TRANSISTOR

Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=2.3mMAX.(VGS=10V,ID=50A) ･LowCissCiss=4700pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N04PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4700pFTYP.(VDS=25V) •Designedforautomotiveapplicat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N04PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=2.3mMAX.(VGS=10V,ID=50A) ･LowCissCiss=4700pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N04PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4700pFTYP.(VDS=25V) •Designedforautomotiveapplicat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N04PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=2.3mMAX.(VGS=10V,ID=50A) ･LowCissCiss=4700pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N055PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP100N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=3.25mMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4900pFTYP.(VDS=25V) •Designedforautomotiveapplicatio

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N055PUK

MOS FIELD EFFECT TRANSISTOR

Features Superlowon-stateresistance RDS(on)=3.25mMAX.(VGS=10V,ID=50A) LowCiss:Ciss=4900pFTYP.(VDS=25V) DesignedforautomotiveapplicationandAEC-Q101qualified

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N055PUK_V01

MOS FIELD EFFECT TRANSISTOR

Features Superlowon-stateresistance RDS(on)=3.25mMAX.(VGS=10V,ID=50A) LowCiss:Ciss=4900pFTYP.(VDS=25V) DesignedforautomotiveapplicationandAEC-Q101qualified

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N055PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP100N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=3.25mMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4900pFTYP.(VDS=25V) •Designedforautomotiveapplicatio

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N055PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Features Superlowon-stateresistance RDS(on)=3.25mMAX.(VGS=10V,ID=50A) LowCiss:Ciss=4900pFTYP.(VDS=25V) DesignedforautomotiveapplicationandAEC-Q101qualified

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N055PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP100N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=3.25mMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4900pFTYP.(VDS=25V) •Designedforautomotiveapplicatio

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N055PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Features Superlowon-stateresistance RDS(on)=3.25mMAX.(VGS=10V,ID=50A) LowCiss:Ciss=4900pFTYP.(VDS=25V) DesignedforautomotiveapplicationandAEC-Q101qualified

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100P04PDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P04PDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P04PDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P04PLG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(D

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P04PLG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(D

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P04PLG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(D

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P06PDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P06PDG

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100P06PDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P06PDG-E1-AY

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100P06PDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P06PLG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P06PLG

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100P06PLG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P06PLG-E1-AY

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100P06PLG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP109N04PUG

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheNP109N04PUGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) •HighcurrentratingID(DC)=±110A

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP109N04PUG-E1-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheNP109N04PUGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) •HighcurrentratingID(DC)=±110A

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP109N04PUG-E2-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheNP109N04PUGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) •HighcurrentratingID(DC)=±110A

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP109N04PUJ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP109N04PUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) •Lowinputcapacitance Ciss=6900pFTYP. •Designedforautomotiveapplicati

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUJ-E1B-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP109N04PUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) •Lowinputcapacitance Ciss=6900pFTYP. •Designedforautomotiveapplicati

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUJ-E2B-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP109N04PUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) •Lowinputcapacitance Ciss=6900pFTYP. •Designedforautomotiveapplicati

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUK

MOS FIELD EFFECT TRANSISTOR

Description NP109N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.75mMAX.(VGS=10V,ID=55A) ･LowCissCiss=7200pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.75mΩMAX.(VGS=10V,ID=55A) •LowCiss:Ciss=7200pFTYP.(VDS=25V) •Designedforautomotiveapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUK_V01

MOS FIELD EFFECT TRANSISTOR

Description NP109N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.75mMAX.(VGS=10V,ID=55A) ･LowCissCiss=7200pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description NP109N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.75mMAX.(VGS=10V,ID=55A) ･LowCissCiss=7200pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.75mΩMAX.(VGS=10V,ID=55A) •LowCiss:Ciss=7200pFTYP.(VDS=25V) •Designedforautomotiveapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.75mΩMAX.(VGS=10V,ID=55A) •LowCiss:Ciss=7200pFTYP.(VDS=25V) •Designedforautomotiveapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description NP109N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.75mMAX.(VGS=10V,ID=55A) ･LowCissCiss=7200pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N055PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=2.2mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=7500pFTYP.(VDS=25V) ●Designedforautomotiveapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N055PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=2.2mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=7500pFTYP.(VDS=25V) Designedforautomotiveapplicationan

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N055PUK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP109N055PUK_V01

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=2.2mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=7500pFTYP.(VDS=25V) Designedforautomotiveapplicationan

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N055PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=2.2mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=7500pFTYP.(VDS=25V) Designedforautomotiveapplicationan

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N055PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=2.2mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=7500pFTYP.(VDS=25V) ●Designedforautomotiveapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NP1产品属性

  • 类型

    描述

  • 型号

    NP1

  • 制造商

    Distributed By MCM

  • 功能描述

    Noise Plug Pink Noise Generator

  • 制造商

    MCM

  • 功能描述

    NOISE PLUG PINK NOISE GENERATOR,

  • FEATURES

    20 HZ-20 KHZ PRECISION REFERENCE, ACCURATE 3 DB PER OCTAVE ROLLOFF, BALANCED MICROPHONE LEVEL OUTPUT, BUILT-IN PHANTOM POWER INDICATOR, COMPACT DESIGN, NO BATTERIES REQUIRED

  • 制造商

    Hubbell Premise Wiring

  • 制造商

    Hubbell Wiring Device-Kellems

  • 功能描述

    WALLPLATE, 1-G, TOGG, BR

NP1供应商更多...

更新时间：2024-5-29 15:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市胜彬电子有限公司
NP100P04PDG-E1-AY
RENESAS/瑞萨
22+
TO-263
8113
原装正品现货假一罚十
询价
深圳市正纳电子有限公司
NP180N055TUK-E1-AY
Renesas(瑞萨)
23+
原厂封装
32078
10年以上分销商,原装进口件,服务型企业
询价
深圳市得捷芯城科技有限公司
NP100P04PDG-E1-AY
RENESAS瑞萨
23+
TO-263
13716
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
深圳市坤融电子科技有限公司
NP15P04SLG-E1-AY
RENESAS/瑞萨
2024+原装现货
TO252
8950
BOM配单专家,发货快,价格低
询价
深圳市明嘉莱科技有限公司
NP1.2-12FR
ENERSYS
22+
SMD
518000
明嘉莱只做原装正品现货
询价
深圳兆威电子有限公司
NP15P04
LN
23+
ESOP8
14788
LN直接代理
询价
深圳市骏创达科技有限公司
NP-1.25
JST
2332+
226570
一级代理,原装正品!
询价
深圳市力拓辉电子有限公司
NP110N04PUG-E1-AY
Renesas
21+
-
7
全新原装 鄙视假货15118075546
询价
深圳市科恒伟业电子有限公司
NP110N04PUG-E1-AY
RENESAS/瑞萨
22+
TO263
9850
只做原装正品假一赔十!正规渠道订货!
询价
深圳市勇康微科技有限公司
NP1216DR-G
南麟
23+
SOT-23-6
180000
一级代理全新原装现货正品保证免费试样提供技术支持
询价

NP1芯片相关品牌

  • 3M
  • AVX
  • GSI
  • MA-COM
  • MARL
  • MORNSUN
  • PAIRUI
  • PCA
  • PF
  • RENESAS
  • TTELEC
  • XFMRS

NP1规格书下载地址

NP1参数引脚图相关

NP1数据表相关新闻

DdatasheetPDF页码索引

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