VMB10-12S参数引脚图供应代理商ASI-IC资料网

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型号	功能描述	生产厂家企业	LOGO
VHB10-12F	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-12F is Designed for 12.5 V, Class C Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System	ASI	ASI
VHB10-12S	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-12S is Designed for 12.5 V, High Band Application. FEATURES: • Common Emitter • PG = 10 dB at 10 W/175 MHz • Omnigold™ Metalization System	ASI	ASI
VLB10-12F	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB10-12F is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz. FEATURES: • Common Emitter • PG = 16 dB at 10 W/50 MHz • Omnigold™ Metalization System	ASI	ASI
VLB10-12S	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB10-12S is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz. FEATURES: • Common Emitter • PG = 16 dB at 10 W/50 MHz • Omnigold™ Metalization System	ASI	ASI
VMB10-12S	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VMB10-12Sis Designed for 12.5 V, Medium Band Class C Application. FEATURES: • Common Emitter • PG= 13 dB at 10W/88MHz • Omnigold™ Metalization System	ASI	ASI

NNL10-12C-R供应商更多...

更新时间：2026-7-31 18:45:02

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	VMB-1215S3	VITEC	23+	SIP	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
现代芯城（深圳）科技有限公司	VMB1GJDB-AACAW-14D		26+	N/A	48000	一级代理-主营优势-实惠价格-不悔选择	询价

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