1024-Bit Serial CMOS EEPROM (MICROWIRE??Synchronous Bus)

General Description NM93C46 is a 1024-bit CMOS non-volatile EEPROM organized as 64 x 16-bit array. This device features MICROWIRE interface which is a 4-wire serial bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals. This interface is compat ible to many of standar

256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) and Data Protect (MICROWIRE-TM Bus Interface)

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1024-Bit Serial CMOS EEPROM (MICROWIRE??Synchronous Bus)

General Description NM93C46 is a 1024-bit CMOS non-volatile EEPROM organized as 64 x 16-bit array. This device features MICROWIRE interface which is a 4-wire serial bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals. This interface is compat ible to many of standar

1024-Bit Serial CMOS EEPROM (MICROWIRE??Synchronous Bus)

General Description NM93C46 is a 1024-bit CMOS non-volatile EEPROM organized as 64 x 16-bit array. This device features MICROWIRE interface which is a 4-wire serial bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals. This interface is compat ible to many of standar

1024-Bit Serial CMOS EEPROM (MICROWIRE??Synchronous Bus)

General Description NM93C46 is a 1024-bit CMOS non-volatile EEPROM organized as 64 x 16-bit array. This device features MICROWIRE interface which is a 4-wire serial bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals. This interface is compat ible to many of standar

1K 64 x 16 SERIAL MICROWIRE EEPROM

DESCRIPTION The ST93CS46 and ST93CS47 are 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricatedwith SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 1K bit memory is organized as 64 x 16 bit words.Th

1K 64 x 16 SERIAL MICROWIRE EEPROM

DESCRIPTION The ST93CS46 and ST93CS47 are 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricatedwith SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. The memory is accessed through a serial input D and output Q. The 1K bit memory is organized as 64 x 16 bit words.Th