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NJVMJD122T4G价格
参考价格：￥1.5717
型号：NJVMJD122T4G 品牌：ONSemi 备注：这里有NJVMJD122T4G多少钱，2025年最近7天走势，今日出价，今日竞价，NJVMJD122T4G批发/采购报价，NJVMJD122T4G行情走势销售排行榜，NJVMJD122T4G报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NJVMJD122T4G | Complementary Darlington Power Transistor 文件：106.5 Kbytes Page：8 Pages | ONSEMI 安森美半导体 |   | |
NJVMJD122T4G | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：TRANS NPN DARL 100V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
NJVMJD122T4G | Complementary Darlington Power Transistor | ONSEMI 安森美半导体 | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN DARL 100V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur | Motorola 摩托罗拉 | | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半导体 | | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半导体 | | ||
Complementary Darlington Power Transistor 文件：87.53 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistor 文件：136.31 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | |
NJVMJD122T4G产品属性
- 类型
描述
- 型号
NJVMJD122T4G
- 功能描述
达林顿晶体管 BIP DPAK NPN 8A 100V TR
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-252 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
ON/安森美 |
24+ |
NA |
58604 |
||||
ON |
2023+ |
TO-252 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
ON/安森美 |
24+ |
NA/ |
2500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
安森美 |
2123+ |
DPAK |
7500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON |
23+ |
NA |
6800 |
原装正品,力挺实单 |
|||
ONSEMI/安森美 |
22+ |
TO-252 |
25800 |
原装正品支持实单 |
|||
ON(安森美) |
24+ |
标准封装 |
8000 |
原厂原装，价格优势，欢迎洽谈！ |
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NJVMJD122T4G规格书下载地址
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2023-2-15NJVMJD31CT4G
型号：NJVMJD31CT4G ?品牌：ON 封装 ：SOT-252 ?批号；21+ 优势现货库存
DdatasheetPDF页码索引
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