Excellent EMI Immunity Low Noise, Precision Operational Amplifiers

■ FEATURES(V+=5V, V-=0V, Ta=25°C) ● Precision VIO=50μV max. VIO=100μV max.（-40°C to +125°C） ● Low Offset Drift 0.6μV/°C max. ● Integrated EMI filter EMIRR=78dB typ. @ f=900MHz ● Low Bias Current 2.5nA max. ● Low Noise 8nV/√Hz typ. @ f=1kHz ● Unity Gain Stable ● No Phase Reversal ● Supply

有EMI滤波器、低噪声的精密运算放大器

丝印代码：277F；Excellent EMI Immunity Low Noise, Precision Operational Amplifiers

■ FEATURES(V+=5V, V-=0V, Ta=25°C) ● Precision VIO=50μV max. VIO=100μV max.（-40°C to +125°C） ● Low Offset Drift 0.6μV/°C max. ● Integrated EMI filter EMIRR=78dB typ. @ f=900MHz ● Low Bias Current 2.5nA max. ● Low Noise 8nV/√Hz typ. @ f=1kHz ● Unity Gain Stable ● No Phase Reversal ● Supply

丝印代码：277F；Excellent EMI Immunity Low Noise, Precision Operational Amplifiers

■ FEATURES(V+=5V, V-=0V, Ta=25°C) ● Precision VIO=50μV max. VIO=100μV max.（-40°C to +125°C） ● Low Offset Drift 0.6μV/°C max. ● Integrated EMI filter EMIRR=78dB typ. @ f=900MHz ● Low Bias Current 2.5nA max. ● Low Noise 8nV/√Hz typ. @ f=1kHz ● Unity Gain Stable ● No Phase Reversal ● Supply

丝印代码：277G；Excellent EMI Immunity Low Noise, Precision Operational Amplifiers

■ FEATURES(V+=5V, V-=0V, Ta=25°C) ● Precision VIO=50μV max. VIO=100μV max.（-40°C to +125°C） ● Low Offset Drift 0.6μV/°C max. ● Integrated EMI filter EMIRR=78dB typ. @ f=900MHz ● Low Bias Current 2.5nA max. ● Low Noise 8nV/√Hz typ. @ f=1kHz ● Unity Gain Stable ● No Phase Reversal ● Supply

丝印代码：277G；Excellent EMI Immunity Low Noise, Precision Operational Amplifiers

■ FEATURES(V+=5V, V-=0V, Ta=25°C) ● Precision VIO=50μV max. VIO=100μV max.（-40°C to +125°C） ● Low Offset Drift 0.6μV/°C max. ● Integrated EMI filter EMIRR=78dB typ. @ f=900MHz ● Low Bias Current 2.5nA max. ● Low Noise 8nV/√Hz typ. @ f=1kHz ● Unity Gain Stable ● No Phase Reversal ● Supply

Band-switching diode

DESCRIPTION Planar high performance band-switching diode in a small plastic SOD523 (SC-79) SMD package. FEATURES • Small plastic SMD package • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.2 pF • Low diode forward resist

Round Type

Round Type φ 3.0 mm Series

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION This device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series are designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectroni

Ultra Bright GaAIAs Lamps

文件：30.91 Kbytes Page：1 Pages

Round Type

文件：30.41 Kbytes Page：1 Pages