Power MOSFET with Current Mirror FET 24 V, 9.5 A, N-Channel, ESD Protected, 1:250 Current Mirror

N-Channel MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit while keeping a high accuracy in the linear region. This device takes advantage of the latest leadless QFN package to improve thermal transfer. • Current Sense MOSFET\n• ±15% Current Mirror Accuracy in Low Current Saturation Region\n• Low Gate Charge\n• Pb-Free Package is Available;

Power MOSFET with Current Mirror FET

文件：90.69 Kbytes Page：9 Pages

Power MOSFET with Current Mirror FET

文件：90.69 Kbytes Page：9 Pages

Power MOSFET with Current Mirror FET

文件：90.69 Kbytes Page：9 Pages

GaAlAs Red Light Emitting Diode

GaAlAs Red Light Emitting Diode For optical fiber communications and control systems Features ● Red light emission close to monochromatic light : λP = 680 nm ● High-power output, high-efficiency : PO = 3 mW ● High coupling characteristics and suits to a plastic fiber ● High-speed response :

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half.

FAMILY OF SELF-CALIBRATING Self-CalE PRECISION CMOS RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS

文件：498.4 Kbytes Page：32 Pages

FAMILY OF SELF-CALIBRATING Self-CalE PRECISION CMOS RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS

文件：498.4 Kbytes Page：32 Pages