Field Stop and trench IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.0V@IC= 75A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Induction Heating,UPS ·AC & DC motor controls and general purpose inverters

IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • Extremely Efficient Trench w

IGBT

文件：245.07 Kbytes Page：11 Pages

IGBT

文件：246.31 Kbytes Page：11 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT TRENCH/FS 650V 100A TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • Extremely Efficient Trench w

IGBT

文件：245.07 Kbytes Page：11 Pages

IGBT - Field Stop II / 4 Lead

文件：162.87 Kbytes Page：10 Pages