Ignition IGBT

文件：110.72 Kbytes Page：7 Pages

Ignition IGBT

文件：147.84 Kbytes Page：7 Pages

Ignition IGBT

Ignition IGBT 20 A, 400 V, N.Channel DPAK

文件：125.66 Kbytes Page：8 Pages

Ignition IGBT

文件：147.84 Kbytes Page：7 Pages

Ignition IGBT

文件：110.72 Kbytes Page：7 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IGBT 440V 20A 125W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IGBT 440V 20A 125W DPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Ignition IGBT

文件：147.84 Kbytes Page：7 Pages

Ignition IGBT 20 A, 400 V, N.Channel DPAK

文件：125.66 Kbytes Page：8 Pages

Pseudo inductance for telephones

The BA8201 and BA8201F are ICs with a choke coil action, capable of extracting the DC current from a telephone line while maintaining a high inductance on the telephone line side. This eliminates the need for a choke coil, and facilitates use of the telephone set line in a variety of applications.

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

18W BTL x 2CH AUDIO POWER AMPLIFIER

文件：488.37 Kbytes Page：11 Pages

18W BTL x 2CH AUDIO POWER AMPLIFIER

文件：488.37 Kbytes Page：11 Pages

BTL AUDIO POWER AMPLIFIER

文件：413.12 Kbytes Page：8 Pages