InGaP/GaAs HBT MMIC Amplifier

[Sirenza] Product Features • High Gain : 14.5 dB at 1950 Mhz • Cascadable 50 ohm • Patented InGap Technology • Operates From Single Supply • Low Thermal Resistance Package Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite

InGaP/GaAs HBT MMIC Amplifier

Product Features • High Gain : 14.5 dB at 1950 Mhz • Cascadable 50 ohm • Patented InGap Technology • Operates From Single Supply • Low Thermal Resistance Package Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite

0.5-10 GHz, cascadable 50 ohm InGa/GaAs HBT MMIC amplifier. High gain: 14.5 dB at 1950MHz.

High Current Transistors

High Current Transistors NPN Silicon

High Current Transistors

High Current Transistors NPN Silicon

High Current Transistors

High Current Transistors NPN Silicon

High Current Transistors(NPN Silicon)

High Current Transistors NPN Silicon Features • Pb−Free Packages are Available*

Silicon P-Channel JFET Transistor General Purpose AF Amplifier

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Gate–Drain Voltage (Note 1), VGD . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage (Note 1), VGS . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current, IG . . . . . . . . . . . . .