2.3 GHz POWER OSCILLATOR TRANSISTOR

DESCRIPTION AND APPLICATIONS The NEX2300 series is an NPN transistor using NECs advanced Stepped Electrode Transistor (SET) structure with emitter ballasting resistors. The Pt-Si/Ti/Au metallization system assures optimum reliability. The series is provided in grounded collector hermetic packages

2.3 GHz POWER OSCILLATOR TRANSISTOR

DESCRIPTION AND APPLICATIONS The NEX2300 series is an NPN transistor using NECs advanced Stepped Electrode Transistor (SET) structure with emitter ballasting resistors. The Pt-Si/Ti/Au metallization system assures optimum reliability. The series is provided in grounded collector hermetic packages

2.3 GHz POWER OSCILLATOR TRANSISTOR

DESCRIPTION AND APPLICATIONS The NEX2300 series is an NPN transistor using NECs advanced Stepped Electrode Transistor (SET) structure with emitter ballasting resistors. The Pt-Si/Ti/Au metallization system assures optimum reliability. The series is provided in grounded collector hermetic packages

Vibrating level switch

The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt

1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

SOT-23 Plastic-Encapsulate MOSFETS

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10V P-Channel Enhanced MOS FET

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-2.8A竊?20V P-CHANNEL MOSFET

文件：111.41 Kbytes Page：4 Pages