型号 功能描述 生产厂家 企业 LOGO 操作
NESG7030M04-T2B

NPN Silicon Germanium Carbon RF Transistor

FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz • Maximum stable power gain: MSG

RENESAS

瑞萨

NPN Silicon Germanium Carbon RF Transistor

FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz • Maximum stable power gain: MSG

RENESAS

瑞萨

NPN Silicon Germanium Carbon RF Transistor

FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz • Maximum stable power gain: MSG

RENESAS

瑞萨

NPN Silicon Germanium Carbon RF Transistor

FEATURES • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz • Maximum stable power gain: MSG

RENESAS

瑞萨

更新时间:2025-10-30 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NHIA
24+
NA/
5750
原装现货,当天可交货,原型号开票
NICHIA/日亚
24+
NA
990000
明嘉莱只做原装正品现货
NICHIA
10+
3014(0.52)
2500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NICHIA
23+
1206
9868
专做原装正品,假一罚百!
NICHIA
2450+
SMD
8540
只做原装正品假一赔十为客户做到零风险!!
NICHIA
SMD-2
35560
一级代理 原装正品假一罚十价格优势长期供货
NICHIA
23+
SMD
27000
原厂授权一级代理,专业海外优势订货,价格优势、品种
NICHICON
原厂封装
9800
原装进口公司现货假一赔百
NICHIA
12+
SMD
870
NICHIA
2023+
3014(0.52)
8800
正品渠道现货 终端可提供BOM表配单。

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