型号 功能描述 生产厂家 企业 LOGO 操作

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP.

NEC

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @

RENESAS

瑞萨

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @

RENESAS

瑞萨

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP.

NEC

瑞萨

HIGH FREQUENCY TRANSISTOR

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CEL

更新时间:2025-10-29 23:00:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
5000
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
24+
SOT343
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
NEC
04+
SOT563
10000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CEL
20+
SOT-523
36800
原装优势主营型号-可开原型号增税票
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
NEC
21+
SOT-343
10000
原装现货假一罚十
NEC
2450+
SOT343
6540
只做原装正品现货或订货!终端客户免费申请样品!
NEC
23+
SOT563
12500
原厂原装正品
CEL
24+
原厂原装
5000
原装正品
NEC(日电电子)
2526+
Original
50000
只做原装优势现货库存,渠道可追溯

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