NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 21.5 dB TY

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 21.5 dB TY

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

DESCRIPTION NECs NESG2031M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. NEC slow profile, flat lead style M05 Package provides high frequency

NPN SiGe HIGH FREQUENCY TRANSISTOR

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