型号 功能描述 生产厂家 企业 LOGO 操作
NESG2021M05-A

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 22.5 dB T

RENESAS

瑞萨

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications. ⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz ⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz • Maximum stable power gain: MSG = 22.5 dB T

RENESAS

瑞萨

NECs NPN SiGe HIGH FREQUENCY TRANSISTOR

文件:729.7 Kbytes Page:14 Pages

CEL

NESG2021M05-A产品属性

  • 类型

    描述

  • 型号

    NESG2021M05-A

  • 功能描述

    射频硅锗晶体管 NPN SiGe High Freq

  • RoHS

  • 制造商

    Infineon Technologies 发射极 - 基极电压

  • 封装

    Reel

更新时间:2025-10-31 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
2016+
SOT343
3500
只做原装,假一罚十,公司可开17%增值税发票!
NEC
20+
SOT343
32970
原装优势主营型号-可开原型号增税票
NEC
24+
SOT343
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
NEC
23+
SOT343
8160
原厂原装
NEC
08+
SOT343
480
NEC
22+
SOT-343
30000
只做原装正品
NEC
SOT23
68500
一级代理 原装正品假一罚十价格优势长期供货
NEC
23+
原厂封装
13528
振宏微原装正品,假一罚百
CEL
24+
原厂原封
4000
原装正品
NEC
23+
SOT343
3253
原厂原装正品

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