CABLE CLAMPS, PLASTISOL DIPPED

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包装：散装 描述：CBL CLAMP P-TYPE FASTENER 电缆，电线 - 管理 电缆支撑与紧固件

1GHz LNA and mixer

DESCRIPTION The NE/SA600 is a combined low noise amplifier (LNA) and mixer designed for high-performance low-power communication systems from 800-120MHz.

1GHz LNA and mixer

DESCRIPTION The NE/SA600 is a combined low noise amplifier (LNA) and mixer designed for high-performance low-power communication systems from 800-120MHz.

DOUBLE BALANCED MIXER AND OSCILLATOR

DOUBLE BALANCED MIXER AND OSCILLATOR

DOUBLE BALANCED MIXER AND OSCILLATOR

DOUBLE BALANCED MIXER AND OSCILLATOR

High performance low power FM IF system

DESCRIPTION The NE/SA604A is an improved monolithic low-power FM IF system incorporating two limiting intermediate frequency amplifiers, quadrature detector, muting, logarithmic received signal strength indicator, and voltage regulator. The NE/SA604A features higher IF bandwidth (25MHz) and tem

Ceramic Discriminator for Communications Equipment

1. Small in size and light weight. 2. Realize non-adjustment in detection circuit. 3. High sensitivity and stability. 4. Wide range of standard products are available for various ICs. 5. Operating temperature range : Y20D to W80D Storage temperature range : Y40D to W85D

HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM

HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM

Ceramic Discriminator for Communications Equipment

1. Small in size and light weight. 2. Realize non-adjustment in detection circuit. 3. High sensitivity and stability. 4. Wide range of standard products are available for various ICs. 5. Operating temperature range : Y20D to W80D Storage temperature range : Y40D to W85D

HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM

HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM

HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM

HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM

HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM

HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM

Double-balanced mixer and oscillator

DESCRIPTION The NE/SA612A is a low-power VHF monolithic double-balanced mixer with on-board oscillator and voltage regulator. It is intended for low cost, low power communication systems with signal frequencies to 500MHz and local oscillator frequencies as high as 200MHz. The mixer is a “Gilbert

Low power FM IF system

DESCRIPTION The NE/SA614A is an improved monolithic low-power FM IF system incorporating two limiting intermediate frequency amplifiers, quadrature detector, muting, logarithmic received signal strength indicator, and voltage regulator.

High performance low power mixer FM IF system

High performance low power mixer FM IF system

NPN MEDIUM POWER MICROWAVE TRANSISTOR

FEATURES ● HIGH OUTPUT POWER: 900 mW at 2 GHz ● HIGH GAIN: 11 dB at 1 GHz ● RELIABILITY: Platinum - Gold Metallization

NPN MEDIUM POWER MICROWAVE TRANSISTOR

FEATURES ● HIGH OUTPUT POWER: 900 mW at 2 GHz ● HIGH GAIN: 11 dB at 1 GHz ● RELIABILITY: Platinum - Gold Metallization

NPN MEDIUM POWER MICROWAVE TRANSISTOR

FEATURES ● HIGH OUTPUT POWER: 900 mW at 2 GHz ● HIGH GAIN: 11 dB at 1 GHz ● RELIABILITY: Platinum - Gold Metallization

Dolby Noise Reduction Circuit

DESCRIPTION The NE645/646 is a monolithic audio noise reduction circuit designed as direct replacement device for the NE645B/NE646B in Dolby* B-Type noise reduction systems.

NPN SILICON LOW NOISE RF TRANSISTOR

DESCRIPTION: The ASI NE64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. FEATURES INCLUDE: • NF = 1.6 dB Typical @ 2 GHz • |S21E|2 = 11 dB Typical @ 2 GHz • Hermetic Ceramic Package

Dolby Noise Reduction Circuit

DESCRIPTION The NE645/646 is a monolithic audio noise reduction circuit designed as direct replacement device for the NE645B/NE646B in Dolby* B-Type noise reduction systems.

Dolby Noise Reduction Circuit

DESCRIPTION The NE645/646 is a monolithic audio noise reduction circuit designed as direct replacement device for the NE645B/NE646B in Dolby* B-Type noise reduction systems.

Dolby Noise Reduction Circuit

DESCRIPTION The NE645/646 is a monolithic audio noise reduction circuit designed as direct replacement device for the NE645B/NE646B in Dolby* B-Type noise reduction systems.

N-CHANNEL GaAs MES FET

1 W L-BAND POWER GaAs MES FET DESCRIPTION The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excelle

N-CHANNEL GaAs MES FET

1 W L-BAND POWER GaAs MES FET DESCRIPTION The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excelle

GaAs MES FET

2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band. FEATURES • Class AB operation • High output power: 35.5 dBm (TYP.) • High Linear Gain: 9.0 dB (TY

GaAs MES FET

2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band. FEATURES • Class AB operation • High output power: 35.5 dBm (TYP.) • High Linear Gain: 9.0 dB (TY

3W L, S-BAND POWER GaAs MESFET

DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and per

3W L, S-BAND POWER GaAs MESFET

DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and per

3W, L/S-BAND MEDIUM POWER GaAs MESFET

DESCRIPTION NECs NE6500379A is a 3 W GaAs MESFET designed for medium power Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and return path MMDS transmitter applications. It is capable of delivering 3 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability

N-CHANNEL GaAs MES FET

N-CHANNEL GaAs MES FET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent dis

3W L, S-BAND POWER GaAs MESFET

DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and per

3W, L/S-BAND MEDIUM POWER GaAs MESFET

DESCRIPTION NECs NE6500379A is a 3 W GaAs MESFET designed for medium power Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and return path MMDS transmitter applications. It is capable of delivering 3 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability

N-CHANNEL GaAs MES FET

N-CHANNEL GaAs MES FET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent dis

4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

GaAs MES FET

4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure. FEATURES • Class A operation • H

L&S BAND MEDIUM POWER GaAs MESFET

DESCRIPTION The NE6500496 is a medium power GaAs MESFET designed for up to a 4 W output stage or as a driver for high power devices. The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz. The chips used in this series offer superior reliability and consistent perf

N-CHANNEL GaAs MES FET

10 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650103M is a 10 W GaAs MES FET designed for power transmitter applications for mobile communication base station systems. It is capable of delivering 10 W of output power (CW) with high linear gain, high efficiency and low distortion. Reli

N-CHANNEL GaAs MES FET

10 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650103M is a 10 W GaAs MES FET designed for power transmitter applications for mobile communication base station systems. It is capable of delivering 10 W of output power (CW) with high linear gain, high efficiency and low distortion. Reli

10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

GaAs MES FET

10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure. FEATURES • Class A operation • H

L/S BAND MEDIUM POWER GaAs MESFET

DESCRIPTION The NE6501077 is a medium power GaAs MESFET designed for up to a 10 W output stage or as a driver for high power devices. The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz. The chips used in this series offer superior reliability and consistent per

0.2 W L, S-BAND POWER GaAs MES FET

DESCRIPTION The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable a

N-CHANNEL GaAs MES FET

0.2 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency

0.2 W L, S-BAND POWER GaAs MES FET

DESCRIPTION The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable a

N-CHANNEL GaAs MES FET

0.2 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency

0.4 W L, S-BAND POWER GaAs MES FET

DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable a

N-CHANNEL GaAs MES FET

0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, e

0.4 W L, S-BAND POWER GaAs MES FET

DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable a

N-CHANNEL GaAs MES FET

0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, e

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECs NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECs NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5

N-CHANNEL GaAs HJ-FET

1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excellent dist

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECs NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECs NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5

N-CHANNEL GaAs HJ-FET

1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excellent dist

NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECs NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5

Integrated Circuit Dolby Noise Reduction Circuit