位置:首页 > IC中文资料 > NE5230

NE5230价格

参考价格:¥4.1913

型号:NE5230DG 品牌:ON 备注:这里有NE5230多少钱,2026年最近7天走势,今日出价,今日竞价,NE5230批发/采购报价,NE5230行情走势销售排行榜,NE5230报价。
型号 功能描述 生产厂家 企业 LOGO 操作
NE5230

Low voltage operational amplifier

DESCRIPTION The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8V or as high as 15V. In addition, split or single supplies can be used, and the output will swing to ground when applying the latter. There is a bias adjusting pin which con

PHILIPS

飞利浦

NE5230

运算放大器,低电压

The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8 V or as high as 15 V. In addition, split or single supplies can be used, and the output will swing to ground when applying the latter. There is a bias adjusting pin which controls the supply c • Works Down to 1.8 V Supply Voltages\n• Adjustable Supply Current\n• Low Noise\n• Common−mode Includes Both Rails\n• VOUT Within 100 mV of Both Rails;

ONSEMI

安森美半导体

NE5230

Low Voltage Operational Amplifier

文件:245.63 Kbytes Page:18 Pages

ONSEMI

安森美半导体

NE5230

Low Voltage Operational Amplifier

文件:211.45 Kbytes Page:18 Pages

ONSEMI

安森美半导体

Low voltage operational amplifier

DESCRIPTION The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8V or as high as 15V. In addition, split or single supplies can be used, and the output will swing to ground when applying the latter. There is a bias adjusting pin which con

PHILIPS

飞利浦

Low voltage operational amplifier

DESCRIPTION The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8V or as high as 15V. In addition, split or single supplies can be used, and the output will swing to ground when applying the latter. There is a bias adjusting pin which con

PHILIPS

飞利浦

Low Voltage Operational Amplifier

文件:211.45 Kbytes Page:18 Pages

ONSEMI

安森美半导体

Low Voltage Operational Amplifier

文件:245.63 Kbytes Page:18 Pages

ONSEMI

安森美半导体

Low Voltage Operational Amplifier

文件:245.63 Kbytes Page:18 Pages

ONSEMI

安森美半导体

Low Voltage Operational Amplifier

文件:211.45 Kbytes Page:18 Pages

ONSEMI

安森美半导体

Low Voltage Operational Amplifier

文件:245.63 Kbytes Page:18 Pages

ONSEMI

安森美半导体

Low Voltage Operational Amplifier

文件:211.45 Kbytes Page:18 Pages

ONSEMI

安森美半导体

Low Voltage Operational Amplifier

文件:245.63 Kbytes Page:18 Pages

ONSEMI

安森美半导体

Low Voltage Operational Amplifier

文件:245.63 Kbytes Page:18 Pages

ONSEMI

安森美半导体

Low Voltage Operational Amplifier

文件:245.63 Kbytes Page:18 Pages

ONSEMI

安森美半导体

Low Voltage Operational Amplifier

文件:211.45 Kbytes Page:18 Pages

ONSEMI

安森美半导体

VARIABLE OUTPUT VOLTAGE REGULATOR(DUAL TRACKING TYPE)

DESCRIPTION The M5230 is a semiconductor integrated circuit which is designed for variable output voltage regulator of dual tracking type. APPLICATION Dual voltage power supplies for stereo preamplifiers, for the power supplies of other equipment, including operational amplifiers.

MITSUBISHI

三菱电机

VARIABLE OUTPUT VOLTAGE REGULATOR(DUAL TRACKING TYPE)

DESCRIPTION The M5230 is a semiconductor integrated circuit which is designed for variable output voltage regulator of dual tracking type. APPLICATION Dual voltage power supplies for stereo preamplifiers, for the power supplies of other equipment, including operational amplifiers.

MITSUBISHI

三菱电机

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

PANJIT

強茂

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

PANJIT

強茂

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital

ONSEMI

安森美半导体

NE5230产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Rail to Rail:

    Input/Output

  • Channels:

    1

  • VS Min (V):

    1.8

  • VS Max (V):

    15

  • Iq Typ (mA):

    0.11

  • VOS Max (mV):

    3

  • GBW Typ (MHz):

    0.25

  • SR Typ (V/µs):

    0.09

  • IO Typ (mA):

    6

  • ΔVOS/ΔT (μV/C):

    2

  • eN (nV/√Hz):

    30

  • Ibias Typ (pA):

    40000

  • CMRR Typ (dB):

    95

  • Architecture:

    Bipolar

  • Temperature Range (°C):

    0 to 70

  • Package Type:

    SOIC-8

更新时间:2026-5-14 10:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
24+
PDIP-8
6010
只做原装正品
S
2023+
DIP8
50000
原装现货
PHI
1998
SOP-8
81
原装现货海量库存欢迎咨询
PHI
00+
SMD8
862
全新原装100真实现货供应
ON Semiconductor
22+
8PDIP
9000
原厂渠道,现货配单
恩XP
25+
SOP8
90000
一级代理商进口原装现货、价格合理
S
24+
N/A
3000
公司存货
S
24+
SO-3.9
5000
全现原装公司现货
S
25+
SOP
4500
全新原装、诚信经营、公司现货销售
ON
20+
SOP-8
2960
诚信交易大量库存现货

NE5230数据表相关新闻

  • NE5532ADR

    NE5532ADR

    2023-4-14
  • NE5532DRG4 TI/德州仪器 21+ SOP8

    https://hfx03.114ic.com/

    2022-2-19
  • NE5532DR原装热卖库存

    型号: NE5532DR 制造商 Texas Instruments 制造商零件编号 NE5532DR 描述 IC OPAMP GP 2 CIRCUIT 8SOIC 对无铅要求的达标情况/对限制有害物质指令(RoHS)规范的达标情况 无铅/符合限制有害物质指令(RoHS3)规范要求 ?湿气敏感性等级 (MSL) 1(无限) 详细描述 通用-放大

    2021-12-6
  • NE3512S02-T1DNE3512S02-T1C

    NE3512S02-T1C,全新原装当天发货或门市自取0755-82732291. NE3512S02-T1D

    2019-12-17
  • NE3512S02-T1D

    NE3512S02-T1D,全新原装当天发货或门市自取0755-82732291.

    2019-12-17
  • NE3512S02-T1D

    NE3512S02-T1D,全新原装当天发货或门市自取0755-82732291,

    2019-3-22