NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

[CEL] DESCRIPTION NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styl

HIGH INSERTION GAIN: 18.5 dB at 500 MHz

DESCRIPTION NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The ser

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

[CEL] DESCRIPTION NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styl

Breake Away Header .025(0.64mm) Square Posts

[FOXCONN] Breake Away Header .025 (0.64mm) Square Posts

Breake Away Header .025(0.64mm) Square Posts

[FOXCONN] Breake Away Header .025 (0.64mm) Square Posts

3.4 V, 1.2 W RF Power Amplifier IC

Description The MA02107AF is a three stage power amplifier, designed for paging applications to have an output power of +30.8 dBm with an input power of 0 dBm. This power amplifier operates at +3.4 volts with 55 typical power added efficiency. The MA02107AF is mounted in a standard outline 16-pin

3.4 V, 1.2 W RF Power Amplifier IC

Description The MA02107AF is a three stage power amplifier, designed for paging applications to have an output power of +30.8 dBm with an input power of 0 dBm. This power amplifier operates at +3.4 volts with 55 typical power added efficiency. The MA02107AF is mounted in a standard outline 16-pin