HIGH INSERTION GAIN: 18.5 dB at 500 MHz

DESCRIPTION NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The ser

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

[CEL] DESCRIPTION NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styl

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION\nNECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series • HIGH INSERTION GAIN: 18.5 dB at 500 MHz\n• LOW NOISE FIGURE: 1.5 dB at 500 MHz\n• HIGH POWER GAIN: 12 dB at 2 GHz\n• LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression;

Breake Away Header .025(0.64mm) Square Posts

[FOXCONN] Breake Away Header .025 (0.64mm) Square Posts

Breake Away Header .025(0.64mm) Square Posts

[FOXCONN] Breake Away Header .025 (0.64mm) Square Posts

Low Noise, Cascadable Silicon Bipolar MMIC Amplifier

Description The INA-02100 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier chip. It is designed for narrow or wide bandwidth industrial and military applications that require high gain and low noise IF or RF amplification. Features • Cascadable 50

Coarse Wavelength Division Multiplexer (CWDM) Add/Drop Filter

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