N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

WILMAR??ProtectiveRelays-700Series

SeveraltypesofReversePowerRelaysareavailableincludingrelayssensitivetoreversereactivepower(KVAR).WILMARistheleadingbrandofreversepowerrelays.Ourruggedsealedconstructionprovidescontinuousandreliableoperationunaffectedbyshock,vibrationorothersevereenvironmen

DUALINPUTDIGITALTHERMOMETERS

[KEYSTONE] PHENOLICINSTRUMENTCASES •ChoiceofSizes •Sturdyconstruction •Flushmountingpanels •Casesandpanelsaresoldseparately •CoversavailableinPhenolicorAluminum •Coverscanbemachinedtoacceptdials,switches,displays •Panelmountingscrewsavailable

DuraTorsionInsertandPowerBits

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WihaQualityToolsSlottedBits

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ElectricalCharacteristics,TotalClearingI2t,ArcVoltage,PowerLosses

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