isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 54A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Field Effect Transistor

文件：74.91 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

FEATURES Drain Current -ID= 54A@ TC=25℃ Drain Source Voltage -VDSS= 80V(Min) Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Field Effect Transistor

文件：74.91 Kbytes Page：6 Pages

PHASE CONTROL THYRISTOR

Repetitive voltage up to 800 V Mean on-state current 4925 A Surge current 70 kA

COMPLEMENTARY SILICON POWER TRANSISTORS

POWER LINEAR AND SWITCHING APPLICATIONS

Integrated Circuit TV/FM Sound IF Amplifier

Features: • Greatly Simplifier FM Demodulator Alignment • Excellent Performance at V+ = 8V

7 N-channel 80 mohm FET array enhancement mode MOS transistors

DESCRIPTION Seven enhancement mode MOS transistors in a 24-pin plastic SOT340-1 (SSOP24) package. Six of the transistors are in three half-bridge configurations. FEATURES • High-speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Driving high performance

Silicon MOS IC

文件：31.14 Kbytes Page：2 Pages