N-Channel Enhancement Mode Field Effect Transistor

General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 45mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 45mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

16A HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER

Features ● Glass Passivated Die Construction ● Ultra-Fast Switching ● High Current Capability ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O

Cooper Hand Tools

文件：2.56213 Mbytes Page：60 Pages

Phase leg Intelligent Power Module

文件：171.81 Kbytes Page：6 Pages

Isolation 16.0 AMPS. Glass Passivated High Efficient Rectifiers

文件：64.03 Kbytes Page：2 Pages

16.0AMPS. Glass Passivated High Efficient Rectifiers

文件：399.08 Kbytes Page：3 Pages