iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

N-ChannelEnhancementModeFieldEffectTransistor

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408SeriesHighReliabilityInter-Lock|Green|MetaltoMetal|Receptacle|ClosedCardSlot

Features .200(5.08mm)ContactSpacingx.125(3.18mm)or.150(3.81mm)RowSpacingwithstaggeredGrid Accepts.062(1.57mm)or.093(2.36mm)NominalThicknessP.C.Board EdaconHermaphroditicContactMatingDesign ContactTerminationOptionsincludeP.C.Tail,ForkTail,WireHolean

Replace“XX”with01through12fornumberofpoles11/16(.688)pitch

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DetectableBuriedBarricadeTapes400Series

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InterconnectionCordwithPlugG-Horizontal,Angled

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GP-IBCableAssemblyEMI/RFIShieldingVersion

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