isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.52Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Power MOSFET 500 V, 0.52 

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N-Channel Power MOSFET 500 V, 0.52 

文件：119.18 Kbytes Page：7 Pages

500V N-CHANNEL MOSFET

„ DESCRIPTION The UTC 11N50is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The U

11A, 500V N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Power MOSFET

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