N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

N-Channel Enhancement Mode Field Effect Transistor

Integrated Circuit Low Power, Narrow Band, FM IF System

Description: The NTE853 is a low power narrow band FM IF system which includes: Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. The NTE853 is designed for use in FM dual conversion communications equipment. Features: ● Low D

FAST RECOVERY RECTIFIER DIODE

DESCRIPTION Their high efficiency and high reliability combined with small size and low cost make these fast recovery rectifier diode very attractive components for many demanding applications. ■ LOW FORWARD VOLTAGE DROP ■ HIGH SURGE CURRENT CAPABILITY APPLICATIONS ■ AC-DC POWER SUPPLIES AND

FAST RECOVERY RECTIFIER DIODES

DESCRIPTION Their high efficiency and high reliability combined with small size and low cost make these fast recovery rectifier diodes very attractive components for many demanding applications. ■ LOW FORWARD VOLTAGE DROP ■ HIGH SURGE CURRENT CAPABILITY APPLICATIONS ■ AC-DC POWER SUPPLIES AND

REGULATED GaAs FET BIAS SUPPLY

文件：75.43 Kbytes Page：7 Pages

REGULATED GaAs FET BIAS SUPPLY

文件：75.43 Kbytes Page：7 Pages