N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

N-Channel Enhancement Mode Field Effect Transistor

MICROMINIATURE POLARIZED RELAY

FEATURES • Conforms to IEC60950/UL1950/EN60950 spacing and high breakdown voltage Clearance: 1.0 mm (between coil and contacts) Creepage: 1.6 mm (between coil and contacts) Basic Insulation: 150 V Working Voltage, Pollution Degree 2 • Monostable and bistable (latching) versions av

PC Mount, Shocksafe 5x20mm Fuses

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3M??Polyester Tape 853

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LF (70/455 kHz)

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SINGLE DIGIT LED DISPLAYS

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