isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 0.8A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，600V，0.8A，15Ω，单 N 沟道，DPAK

N-Channel Power MOSFET

文件：130.09 Kbytes Page：9 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 0.8A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Sw

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Sw

N-Channel 650 V (D-S) MOSFET

文件：1.08589 Mbytes Page：9 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：103.96 Kbytes Page：4 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.08593 Mbytes Page：9 Pages