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NDD价格
参考价格:¥3.8690
型号:NDD 品牌:Neutrik 备注:这里有NDD多少钱,2024年最近7天走势,今日出价,今日竞价,NDD批发/采购报价,NDD行情走势销售排行榜,NDD报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=1.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=1.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=1.7A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=1.7A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=2.2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=2.2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=2.6A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES DrainCurrent-ID=2.6A@TC=25℃ DrainSourceVoltage-VDSS=500V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=3.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=2.6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. ABSOLUTEMAXIMUMRATINGS(Ta=25℃) | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=2.6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=2.9A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=2.9A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=4.1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=4.7A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=4.7A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=100mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=100mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=150mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=150mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NITROGEN DIOXIDE DETECTOR PRODUCTDESCRIPTION TheNDD5B1100nitrogendioxidedetectoruses asuperiorelectrochemicalsensorforreliability andaccuracyinthemostcriticalapplications.The NDD5B1100providesa3wiresourcing4-20mA outputaswellasanalarmrelaywiththreejumper selectabletriplevelsetting | GREYSTONE Greystone Energy Systems Inc. | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=6.6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.745Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=6.6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.745Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=5.7A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.9Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=5.7A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.9Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=0.8A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=0.8A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-Channel 650V (D-S) MOSFET 文件:1.08604 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel Power MOSFET 600 V, 8.5 文件:136.15 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-Channel Power MOSFET 600 V, 8.5 ohm 文件:136.15 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-Channel Power MOSFET 600 V, 8.5 ohm 文件:136.15 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-Channel Power MOSFET 600 V, 8.5 文件:136.15 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-Channel 650V (D-S)Power MOSFET 文件:1.08223 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel 650V (D-S) MOSFET 文件:1.08607 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel Power MOSFET 600 V, 8.5 ohm 文件:136.15 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-Channel MOSFET uses advanced trench technology 文件:1.39517 Mbytes Page:5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | |||
N-Channel Power MOSFET 文件:108.03 Kbytes Page:9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-Channel 650V (D-S) MOSFET 文件:1.08604 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel Power MOSFET 文件:108.03 Kbytes Page:9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-Channel Power MOSFET 文件:108.03 Kbytes Page:9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-Channel MOSFET uses advanced trench technology 文件:1.28082 Mbytes Page:5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | |||
N-Channel Power MOSFET 600 V, 4.8 文件:146.41 Kbytes Page:10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-Channel Power MOSFET 600 V, 4.0 文件:168.55 Kbytes Page:10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-Channel Power MOSFET 文件:148.07 Kbytes Page:10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
N-Channel 650V (D-S)Power MOSFET 文件:1.08208 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel Power MOSFET 600 V, 4.0 文件:168.55 Kbytes Page:10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |
NDD产品属性
- 类型
描述
- 型号
NDD
- 功能描述
XLR 连接器 DUMMYPLUG DIN - RUBBER
- RoHS
否
- 制造商
Neutrik
- 标准
Standard XLR
- 产品类型
Connectors
- 型式
Female
- 位置/触点数量
3
- 端接类型
Solder
- 安装风格
Cable
- 方向
Vertical
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VBsemi/台湾微碧 |
22+ |
DPAK |
28600 |
只做原装正品现货假一赔十一级代理 |
|||
ON |
20+ |
TO-252 |
90000 |
全新原装正品/库存充足 |
|||
ST和英飞凌 |
23+ |
TO220 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
isc |
2024 |
DPAK/TO-252 |
300 |
国产品牌isc,可替代原装 |
|||
VB |
21+ |
DPAK |
10000 |
原装现货假一罚十 |
|||
ON/安森美 |
22+ |
DPAK-3 |
23313 |
||||
ON/安森美 |
23+ |
DPAK-3 |
89630 |
当天发货全新原装现货 |
|||
ON/安森美 |
22+ |
DPAK-3 |
23313 |
终端免费提供样品 可开13%增值税发票 |
|||
VBsemi/台湾微碧 |
19+ 20+ |
DPAK |
32350 |
深圳存库原装现货 |
|||
O |
2020+ |
DPAK |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
NDD规格书下载地址
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- NDD04N60Z-1G
- NDD04N50ZT4G
- NDD03N80ZT4G
- NDD03N80Z-1G
- NDD03N60ZT4G/BKN
- NDD03N60ZT4G
- NDD03N60Z-1G
- NDD03N50ZT4G
- NDD03N50Z-1G
- NDD02N60ZT4G
- NDD02N60Z-1G
- NDD02N40T4G
- NDD02N40-1G
- NDD01N60-1G
- NDC-T
- NDC-S
- NDC-M
- NDC-L
- NDC7003P
- NDC7002N-CUTTAPE
- NDC7002N
- NDC7002
- NDC7001C
- NDC7001
- NDC652P
- NDC652
- NDC651N
- NDC632P
- NDC632
- NDC631N
- NDB710B
- NDB710A
- NDB708B
- NDB708A
- NDB7061
- NDB7060
- NDB7052
- NDB7051
- NDB6060L
- NDB6030PL
- NDB6020P
- NDB5060L
- ND89N16K
- ND89N12K
- ND89N08K
- ND-6530
- ND-6520
- ND-631
- ND-6080
- ND-6056
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DdatasheetPDF页码索引
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