Operational Amplifier, Zero-Drift, 10 V Offset, 0.07 V/C

The NCS333/2333/4333 family of zero−drift op amps feature offset voltage as low as 10 V over the 1.8 V to 5.5 V supply voltage range. The zero−drift architecture reduces the offset drift to as low as 0.07 V/°C and enables high precision measurements over both time and temperature. This famil

精度运算放大器，低功耗，零漂移，30 µV 偏移

Low Power, Zero-Drift Operational Amplifier

文件：640 Kbytes Page：15 Pages

Zero-Drift Operational Amplifier

文件：931.65 Kbytes Page：27 Pages

Low Power, Zero-Drift Operational Amplifier

文件：640.23 Kbytes Page：16 Pages

Zero-Drift Operational Amplifier

文件：931.65 Kbytes Page：27 Pages

Low Power, Zero-Drift Operational Amplifier

文件：640.23 Kbytes Page：16 Pages

Low Power, Zero-Drift Operational Amplifier

文件：640.23 Kbytes Page：16 Pages

Zero-Drift Operational Amplifier

文件：931.65 Kbytes Page：27 Pages

High Speed Switching Application

High Speed Switching Application • Low Collector Saturation Voltage • Specified of Reverse Biased SOA With Inductive Load

Silicon NPN Power Transistor for Switching Power Applications

Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line–operated Switchmode Power supplies and electronic light ballasts. Features: • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

丝印代码：E3***；P-Channel 12-V (D-S) MOSFET

文件：243.12 Kbytes Page：3 Pages