NCP605价格
参考价格：￥4.7145
型号：NCP605MN15T2G 品牌：ONS 备注：这里有NCP605多少钱，2026年最近7天走势，今日出价，今日竞价，NCP605批发/采购报价，NCP605行情走势销售排行榜，NCP605报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCP605 | LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no | ONSEMI 安森美半导体 |   | |
NCP605 | Linear Voltage Regulator, CMOS LDO, Low IGND, with Enhanced ESD Protection The NCP605/NCP606 Low Dropout (LDO) Linear Voltage Regulator provides in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additio • Output Voltage Options:Adjustable, 1.5 V, 1.8 V, 2.5 V, 2.8 V, 3.0 V, 3.3 V, 5.0 V\n• Current Limit 675 mA\n• ±1.5% Output Voltage Tolerance Over All Operating Conditions(Adjustable)\n• NCP605 Fixed is Direct Replacement LP8345\n• Enhanced ESD Ratings: 4 kV Human Body Mode (HBM)400 V Machine M; | ONSEMI 安森美半导体 | | |
NCP605 | 500mA, Low IGND, CMOS LDO Regulator with/without Enable and with Enhanced ESD Protection 文件：147.42 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | |
LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no | ONSEMI 安森美半导体 | | ||
丝印代码：P605150；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no | ONSEMI 安森美半导体 | | ||
丝印代码：P605180；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no | ONSEMI 安森美半导体 | | ||
丝印代码：P605250；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no | ONSEMI 安森美半导体 | | ||
丝印代码：P605280；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no | ONSEMI 安森美半导体 | | ||
丝印代码：P605300；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no | ONSEMI 安森美半导体 | | ||
丝印代码：P605330；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no | ONSEMI 安森美半导体 | | ||
丝印代码：P605500；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no | ONSEMI 安森美半导体 | | ||
丝印代码：P605ADJ；LDO Regulator - Low IGND, CMOS with/without Enable and with Enhanced 500 mA The NCP605/NCP606 provide in excess of 500 mA of output current at fixed voltage options or an adjustable output voltage from 5.0 V down to 1.25 V. These devices are designed for space constrained and portable battery powered applications and offer additional features such as high PSRR, low no | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator 文件：137.28 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator 文件：137.28 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：6-VDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG LINEAR 1.5V 500MA 6DFN 集成电路（IC） 线性 + 开关稳压器 | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator with/without Enable and with Enhanced ESD Protection 文件：147.42 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator with/without Enable and with Enhanced ESD Protection 文件：147.42 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator 文件：137.28 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：6-VDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG LINEAR 1.8V 500MA 6DFN 集成电路（IC） 稳压器 - 线性 | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator with/without Enable and with Enhanced ESD Protection 文件：147.42 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator 文件：137.28 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator with/without Enable and with Enhanced ESD Protection 文件：147.42 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator 文件：137.28 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator 文件：137.28 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator with/without Enable and with Enhanced ESD Protection 文件：147.42 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator with/without Enable and with Enhanced ESD Protection 文件：147.42 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator 文件：137.28 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator 文件：137.28 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator with/without Enable and with Enhanced ESD Protection 文件：147.42 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator with/without Enable and with Enhanced ESD Protection 文件：147.42 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
500mA, Low IGND, CMOS LDO Regulator 文件：137.28 Kbytes Page：13 Pages | ONSEMI 安森美半导体 | | ||
Silicon Varistor Temperature Compensating Diode Features: ● High Reliability Planar Chip and Glass Sealing ● Low IR ● Large PD | NTE | | ||
High performance low power mixer FM IF system HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM | PHILIPS 飞利浦 | | ||
High performance low power mixer FM IF system HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM | PHILIPS 飞利浦 | | ||
High performance low power mixer FM IF system HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM | PHILIPS 飞利浦 | | ||
High performance low power mixer FM IF system HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM | PHILIPS 飞利浦 | |
NCP605产品属性
- 类型
描述
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Output：
Single
- Polarity：
Positive
- VO (V)：
1.5
- IO Typ (A)：
0.5
- VI Min (V)：
1.5
- VI Max (V)：
6
- VDO Typ (V)：
0.15
- Iq Typ (mA)：
0.145
- PSRR (dB)：
62
- Noise (µVrms)：
50
- Enable：
No
- PowerGood：
No
- Package Type：
DFN-6
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
DFN-6-EP(3x3.3) |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON |
24+ |
SMD |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ON/安森美 |
2023+ |
SMD |
6895 |
原厂全新正品旗舰店优势现货 |
|||
ON |
25+23+ |
QFNPB |
38044 |
绝对原装正品全新进口深圳现货 |
|||
ON/安森美 |
22+ |
QFN |
3000 |
原装正品,支持实单 |
|||
ON/安森美 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
ON |
25+ |
DFN6 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
ONS |
24+ |
36 |
|||||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON |
1651+ |
? |
7500 |
只做原装进口,假一罚十 |
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DdatasheetPDF页码索引
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