丝印代码：NCE65T900D；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE65T900D；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE65T900D；N-Channel Super Junction Power MOSFET

文件：1.96916 Mbytes Page：9 Pages

丝印代码：NCE65T900D；N-Channel Super Junction Power MOSFET

文件：1.95034 Mbytes Page：9 Pages

丝印代码：NCE65T900D；LCE N-Channel Super Junction Power MOSFET

文件：1.90393 Mbytes Page：9 Pages

Super Junction MOSFET

\n The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. • New technology for high voltage device\n• Low on-resistance and low conduction losses\n• Small package\n• Ultra Low Gate Charge cause lower driving requirements\n• 100% Avalanche Tested\n• ROHS compliant;

N-Channel Super Junction Power MOSFET

文件：1.96916 Mbytes Page：9 Pages

丝印代码：NCE65T900；LCE N-Channel Super Junction Power MOSFET

文件：1.90393 Mbytes Page：9 Pages

丝印代码：NCE65T900；N-Channel Super Junction Power MOSFET

文件：1.95034 Mbytes Page：9 Pages

丝印代码：NCE65T900F；LCE N-Channel Super Junction Power MOSFET

文件：1.90393 Mbytes Page：9 Pages