丝印代码：NCE60P12K；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-12A RDS(ON)

12-150V P-Channel Trench MOSFET

丝印代码：NCE60P12AS；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P12AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-12A RDS(ON)

丝印代码：WND60P12W-A；Automotive grade standard power diode

General description Standard reverse recovery power diode in a TO247-2L package. Features and benefits • Low forward voltage drop • Low leakage current • High voltage capability • High inrush current capability • Package meets UL94V-0 flammability requirement Applications • Input re