丝印代码：NCE60P09AS；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-9A RDS(ON)

12-150V P-Channel Trench MOSFET

丝印代码：NCE60P09K；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P09K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Application ● Load switch ● PWM application General Features ● VDS =-60V,ID =-9A RDS(ON)

丝印代码：NCE60P09S；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-60V,ID =-9A RDS(ON)