NCE N-Channel Enhancement Mode Power MOSFET

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12-200V N-Channel Trench MOSFET

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE40H12A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =120A RDS(ON)

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 120A@ TC=25℃ · Drain Source Voltage -VDSS= 40V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.95mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

12-200V N-Channel Trench MOSFET

N沟道 MOSFET

NCE N-Channel Enhancement Mode Power MOSFET

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NCE N-Channel Enhancement Mode Power MOSFET

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isc N-Channel MOSFET Transistor

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Axial Fan Axial Lüfter

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