丝印代码：4003；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4003 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =40V,ID =3A RDS(ON) = 33mΩ @ VGS=10V(Typ) RDS(ON) = 52mΩ @ VGS=4.5V(Typ

12-200V N-Channel Trench MOSFET

丝印代码：4003A；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4003A uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =40V,ID =3A RDS(ON) = 32mΩ @ VGS=10V(Typ) RDS(ON) = 43mΩ @ VGS=4.5V(Ty

12-200V N-Channel Trench MOSFET

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)

FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound ● Glass passivated junction version of PG4001S thru PG4007S in A-405 package ● 1 ampere operation at TA=75 ¢J with no thermal runaway ● Exceeds environmenta

Super Fast Soft Recovery Rectifier

FEATURES • Glass passivated • Hermetically sealed axial leaded glass envelope • Low reverse current • High reverse voltage • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Switched mode power supplies • High-frequency inverter circ

1 AMP SMD SILICON RECTIFIER

1 AMP SMD SILICON RECTIFIER

1.0A ULTRAFAST RECOVERY RECTIFIER

Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability

SURFACE MOUNT SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)

文件：23.76 Kbytes Page：2 Pages