丝印代码：0102；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0102M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 2A RDS(ON)

12-200V N-Channel Trench MOSFET

\n The NCE0102M uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It\n can be used in a wide variety of applications. \n• V DS = 100V,I D = 2A\nR DS(ON) <240m? @ V GS =10V (Typ:210m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Excellent package for good heat dissipation;

SENSITIVE GATE SCR

SENSITIVE GATE SCR

0.8A SCRs

DESCRIPTION Thanks to highly sensitive triggering levels, the P01 SCR series is suitable for all applications where available gate current is limited, such as ground fault circuit interruptors, pilot circuits in solid state relays, stand-by mode power supplies, smoke and alarm detectors. Availa

0.8A SCRs

DESCRIPTION Thanks to highly sensitive triggering levels, the P01 SCR series is suitable for all applications where available gate current is limited, such as ground fault circuit interruptors, pilot circuits in solid state relays, stand-by mode power supplies, smoke and alarm detectors. Availa

0.8A SCRs

DESCRIPTION Thanks to highly sensitive triggering levels, the P01 SCR series is suitable for all applications where available gate current is limited, such as ground fault circuit interruptors, pilot circuits in solid state relays, stand-by mode power supplies, smoke and alarm detectors. Availa