3.3V 差分多点低电压 M-LVDS 驱动器接收器

The NB3N200S is a pure 3.3 V supply differential Multipoint Low Voltage (M-LVDS) line Drivers and Receivers. Device NB3N200S is TIA/EIA-899 compliant. NB3N200S offers the Type 1 receiver threshold at 0.0 V.\nThese devices has a Type−1 receiver that detect the bus state with as\nlittle as 50 mV of di • Low Voltage Differential 30Ω to 55Ω Line Drivers and Receivers for signaling Rates Up to 200 Mbps\n• Type 1 Receivers Incorporate 25 mV of Hysteresis\n• Meets or Exceeds the MLVDS Standard TIA/EIA-899 for Multipoint Data Interchange\n• Controlled Driver Output Voltage Transition Times for Improved;

3.3 V Differential Multipoint Low Voltage M-LVDS Driver Receiver

文件：289.43 Kbytes Page：18 Pages

3.3 V Differential Multipoint Low Voltage M-LVDS Driver Receiver

文件：475.45 Kbytes Page：18 Pages

3.3 V Differential Multipoint Low Voltage M-LVDS Driver Receiver

文件：289.43 Kbytes Page：18 Pages

3.3 V Differential Multipoint Low Voltage M-LVDS Driver Receiver

文件：289.43 Kbytes Page：18 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC CLK BUFFER 1:1 200MHZ 8SOIC 集成电路（IC） 时钟缓冲器，驱动器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC CLK BUFFER 1:1 200MHZ 8SOIC 集成电路（IC） 时钟缓冲器，驱动器

3.3 V Differential Multipoint Low Voltage M-LVDS Driver Receiver

文件：289.43 Kbytes Page：18 Pages

SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR

Silicon Dual Insulated-Gate Field-Effect Transistor With Integrated Gate-Protection Circuits For Military and Industrial Applications up to 500 MHz Applications ● RF amplifier, mixer, and IF amplifier in military and industrial communications equipment ● Aircraft and marine vehicular receiver

DUAL-GATE MOSFET

DUAL-GATE MOSFET N-CHANNEL - DEPLETION

3.3 V Automotive Grade M-LVDS Driver Receiver

文件：288.25 Kbytes Page：19 Pages

3.3 V Automotive Grade M-LVDS Driver Receiver

文件：288.25 Kbytes Page：19 Pages