位置：首页 > IC中文资料第2749页 > NAND01GW3B2BNDE
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 | NUMONYX |   | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICS 意法半导体 | |
NAND01GW3B2BNDE产品属性
- 类型
描述
- 型号
NAND01GW3B2BNDE
- 制造商
Micron Technology Inc
- 功能描述
NAND - Trays
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/MICRON |
23+ |
VFBGA-63 |
20000 |
||||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
原厂正品 |
23+ |
VFBGA63 |
8000 |
原装正品,假一罚十 |
|||
NUM |
24+ |
76 |
|||||
ST |
21+ |
TSSOP48 |
10000 |
只做原装,质量保证 |
|||
ST/意法半导体 |
25+ |
TSOP |
5120 |
全新原装正品支持含税 |
|||
ST |
24+ |
BGA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ST/意法 |
24+ |
TSOP48 |
9600 |
原装现货,优势供应,支持实单! |
|||
ST |
23+ |
TSOP |
3960 |
原装正品代理渠道价格优势 |
|||
ST |
24+ |
BGA |
23000 |
免费送样原盒原包现货一手渠道联系 |
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