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型号	功能描述	生产厂家企业	LOGO
NAND01GR3B	512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAG	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BN5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BN5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BN6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BN6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BZA5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BZA5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BZA6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BZA6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BZF5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BZF5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BZF6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2BZF6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2C	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CN5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CN5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CN6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CN6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CZA5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CZA5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CZA6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CZA6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CZF5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CZF5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CZF6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2CZF6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GR3B2AN1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2AN6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2AZA1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2AZA6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2AZB1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2AZB6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2B	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BN1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BN1E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2BN1E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BN1F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2BN1F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BN6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BN6E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BN6E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2BN6F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BN6F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2BZA1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BZA1E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BZA1E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2BZA1F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2BZA1F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BZA6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BZA6E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BZA6E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2BZA6E	封装/外壳：63-TFBGA 包装：管件描述：IC FLASH 1GBIT PARALLEL 63VFBGA 集成电路（IC）存储器	ETC 知名厂家	ETC
NAND01GR3B2BZA6E	IC FLASH 1G PARALLEL 63VFBGA	Micron 美光	Micron
NAND01GR3B2BZA6F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GR3B2BZA6F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BZB1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2BZB6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GR3B2C	1-Gbit, 2112-byte/1056-word page,1.8 V/3 V, single level cell NAND flash memory	Micron 美光	Micron
NAND01GR3B2CN1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

NAND01GR3B产品属性

类型
描述
型号
NAND01GR3B
制造商
STMICROELECTRONICS
制造商全称
STMicroelectronics
功能描述
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

NAND01GR3B供应商更多...

更新时间：2025-11-21 8:22:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市卓越微芯电子有限公司	NAND01GR3B2CZA6E	STM	25+	VFBGA63	12600	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市华康联电子科技有限公司	NAND01GR3B2CZA6E	MICRON	23+	VFBGA63	20000		询价
深圳市云美电子科技有限公司	NAND01GR3B2CZA6E	MICRON/美光	24+	VFBGA63	34560	只做全新原装进口现货	询价
深圳市晨豪科技有限公司	NAND01GR3B2CZA6F	ST/意法	23+	QFN	89630	当天发货全新原装现货	询价
深圳市东来宝电子科技有限公司	NAND01GR3B2CZA6E	NUMONYX	24+	BGA	47186	郑重承诺只做原装进口现货	询价
深圳市斌腾达科技有限公司	NAND01GR3B2CZA6E	Micron Technology Inc.	21+	165-TBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市华来深电子有限公司	NAND01GR3B2BZA6E	ST	23+	BGA63	8560	受权代理!全新原装现货特价热卖!	询价
深圳市亿智腾科技有限公司	NAND01GR3B2CZA6F	ST	24+	QFN	18560	假一赔十全新原装现货特价供应工厂客户可放款	询价
深圳市得捷芯城科技有限公司	NAND01GR3B2CZA6	ST(意法)	24+	NA/	8735	原厂直销,现货供应,账期支持!	询价
深圳市高捷芯城科技有限公司	NAND01GR3B2CZA6F	micron(镁光)	24+	标准封装	22048	全新原装正品/价格优惠/质量保障	询价

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