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TMR3016中文资料
TMR3016数据手册规格书PDF详情
Description
TMR3016 contains a push-pull Wheatstone bridge,
which is composed of four high-sensitivity tunneling
magnetoresistance (TMR) elements. The sensor
outputs a sinusoidal signal, and the period of this
signal corresponds to a 360° rotation of the magnetic
field direction within the sensing plane, independent
of the externally applied magnetic field strength.
TMR3016 uses a compact DFN4L (0.8 mm × 0.4 mm
× 0.23 mm) package for easy assembly in small
spaces.
Features and Benefits
• Tunneling magnetoresistance (TMR) technology
• Wide range supply voltage
• Analog differential output
• Excellent temperature stability
• Adapt to large air gap
• Compact DFN package
• RoHS and REACH compliant
Applications
• Angular position sensing
• Linear position sensing
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TMR3016 芯片相关型号
- 807-016-457-101
- 807-016-457-102
- 807-016-457-103
- 807-016-457-104
- 807-016-457-107
- 807-016-457-108
- 807-016-457-112
- 887-044-555-802
- 887-044-555-803
- 887-044-555-804
- 887-044-555-807
- 887-044-555-808
- 887-044-555-812
- A19360LUBATN-FAE4
- A19360LUBATN-FAE8
- A19360LUBATN-FAR4
- A19360LUBATN-FAR8
- ATS-15C-58-C1-R0
- D2HWA281ML
- D2HWA281MLS
- D2HWA281MR
- D2HWA281MRS
- D2HWA281MS
- TMR3016D
- TMR3017
- TMR3017D
- TMR3022
- TMR3022TP
- VDR34S680
- VDR34S681K
MULTIDIMENSION相关芯片制造商
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