Description

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Features

• Low forward voltage

• Low switching noise

• High current capacity

• Guarantee reverse avalanche

• Guard-ring for stress protection

• Low power loss and high efficiency

• 175°C operating junction temperature

• Low stored charge majority carrier conduction

• Flammability classification 94V-0