The RF Small Signal Line

Silicon Lateral FET

N–Channel Enhancement–Mode MOSFET

Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.

• Performance Specifications at 6 Volt, 850 MHz:

Output Power = 31.5 dBm Min

Power Gain = 8.5 dB Typ

Efficiency = 60 Min

• Guaranteed Ruggedness at Load VSWR = 20:1

• Available in Tape and Reel Packaging Options:

T1 Suffix = 1,000 Units per Reel

• MXR9745RT1 is Gate–Drain Pin Out Reversed.

All Electricals Same as MXR9745T1