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MPIC2112中文资料
MPIC2112数据手册规格书PDF详情
The MPIC2112 is a high voltage, high speed, power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross–conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N–channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts.
• Floating Channel Designed for Bootstrap Operation
• Fully Operational to +600 V
• Tolerant to Negative Transient Voltage
• dV/dt Immune
• Gate Drive Supply Range from 10 to 20 V
• Undervoltage Lockout for Both Channels
• Separate Logic Supply
• Operating Supply Range from 5 to 20 V
• Logic and Power Ground Operating Offset Range from –5 to +5 V
• CMOS Schmitt–triggered Inputs with Pull–down
• Cycle by Cycle Edge–triggered Shutdown Logic
• Matched Propagation Delay for Both Channels
• Outputs in Phase with Inputs
MPIC2112产品属性
- 类型
描述
- 型号
MPIC2112
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
HIGH AND LOW SIDE DRIVER
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOTOROLA |
25+ |
SOP8 |
2978 |
100%全新原装公司现货供应!随时可发货 |
|||
MOTOROLA |
25+ |
DIP8L |
3000 |
强调现货,随时查询! |
|||
MOTOROLA |
DIP8L |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MOTOROLA |
24+ |
DIP8L |
15300 |
公司常备大量原装现货,可开13%增票! |
|||
MOTOROLA/摩托罗拉 |
24+ |
DIP14L |
23000 |
只做正品原装现货 |
|||
MOTOROLA/摩托罗拉 |
25+ |
DIP14 |
503 |
全新原装正品支持含税 |
|||
onsemi(安森美) |
24+ |
- |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
23+ |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
22+ |
DIP |
6000 |
终端可免费供样,支持BOM配单 |
|||
IR |
2023+ |
3000 |
进口原装现货 |
MPIC2112 资料下载更多...
MPIC2112相关电子新闻
MPIC2112DW-高端和低端驱动器
MPIC2112是一种高电压,高速功率MOSFET和IGBT驱动器与独立的高和低侧参考输出通道。专有的HVIC锁存免疫CMOS技术实现坚固的单片式结构。逻辑输入与标准CMOS或LSTTL输出兼容。输出驱动器具有高脉冲电流缓冲级,最低驱动程序设计交叉传导。匹配的传播延迟,以简化在使用频率高应用。浮动通道可以用来驱动一个N沟道功率MOSFET或IGBT在高侧配置经营从10至600伏。 •浮动通道引导操作设计 •全业务600 V •容错负瞬态电压 •的dV/ dt的免疫 R
2012-11-12
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