NPN Silicon Power Transistors SWITCHMODE Bridge Series

. . . specifically designed for use in half bridge and full bridge off line converters.

• Excellent Dynamic Saturation Characteristics

• Rugged RBSOA Capability

• Collector–Emitter Sustaining Voltage — VCEO(sus) — 400 V

• Collector–Emitter Breakdown — V(BR)CES — 650 V

• State–of–Art Bipolar Power Transistor Design

• Fast Inductive Switching:

tfi = 25 ns (Typ) @ 100
°C

tc = 50 ns (Typ) @ 100
°C

tsv = 1 µs (Typ) @ 100
°C

• Ultrafast FBSOA Specified

• 100°C Performance Specified for:

RBSOA

Inductive Load Switching

Saturation Voltages

Leakages