位置:MGW12N120D > MGW12N120D详情

MGW12N120D中文资料

厂家型号

MGW12N120D

文件大小

250.82Kbytes

页面数量

6

功能描述

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

- Bulk

数据手册

下载地址一下载地址二到原厂下载

生产厂商

MOTOROLA

MGW12N120D数据手册规格书PDF详情

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost.

• Industry Standard High Power TO–247 Package with Isolated Mounting Hole

• High Speed Eoff: 160 J per Amp typical at 125°C

• High Short Circuit Capability – 10 s minimum

• Soft Recovery Free Wheeling Diode is included in the package

• Robust High Voltage Termination

• Robust RBSOA

MGW12N120D产品属性

  • 类型

    描述

  • 型号

    MGW12N120D

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

  • 制造商

    Motorola Inc

  • 制造商

    ON Semiconductor

  • 制造商

    MOTOROLA

更新时间:2025-11-2 15:30:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ON
24+
90000
ON/安森美
21+
NA
12820
只做原装,质量保证
ON/安森美
22+
TO
6000
十年配单,只做原装
ON/安森美
23+
TO-247
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON/安森美
22+
N/A
12245
现货,原厂原装假一罚十!
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON(安森美)
24+
NA/
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
ON/安森美
22+
TO
94524
ON
23+
TO-247
239
全新原装正品现货,支持订货

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