位置:MCM67B518FN9 > MCM67B518FN9详情

MCM67B518FN9中文资料

厂家型号

MCM67B518FN9

文件大小

206.92Kbytes

页面数量

12

功能描述

32K x 18 Bit BurstRAM Synchronous Fast Static RAM

数据手册

下载地址一下载地址二到原厂下载

生产厂商

MOTOROLA

MCM67B518FN9数据手册规格书PDF详情

32K x 18 Bit BurstRAM Synchronous Fast Static RAM

With Burst Counter and Self–Timed Write

The MCM67B518 is a 589,824 bit synchronous fast static random access memory designed to provide a burstable, high–performance, secondary cache for the i486™ and Pentium™ microprocessors. It is organized as 32,768 words of 18 bits, fabricated with Motorola’s high–performance silicon–gate BiCMOS technology. The device integrates input registers, a 2–bit counter, high speed SRAM, and high drive capability outputs onto a single monolithic circuit for reduced parts count implementation of cache data RAM applications. Synchronous design allows precise cycle control with the use of an external clock (K). BiCMOS circuitry reduces the overall power consumption of the integrated functions for greater reliability.

This device is ideally suited for systems that require wide data bus widths and cache memory. See Figure 2 for applications information.

• Single 5 V ± 5 Power Supply

• Fast Access Times: 9/10/12 ns Max

• Byte Writeable via Dual Write Enables

• Internal Input Registers (Address, Data, Control)

• Internally Self–Timed Write Cycle

• ADSP, ADSC, and ADV Burst Control Pins

• Asynchronous Output Enable Controlled Three–State Outputs

• Common Data Inputs and Data Outputs

• 3.3 V I/O Compatible

• High Board Density 52–Lead PLCC Package

更新时间:2025-10-28 16:36:00
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MOTOROLA
25+
SOP16
2250
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MOTOROLA/摩托罗拉
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9850
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MOTOROLA/摩托罗拉
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89630
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25+
29
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25+
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73
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MOTOROLA/摩托罗拉
23+
PLCC
50000
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23+
PLCC
13000
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24+
PLCC52
12000
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PLCC52
17300
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