Axial Lead Rectifier

. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes.

• Extremely Low vF

• Low Power Loss/High Efficiency

• Highly Stable Oxide Passivated Junction

• Low Stored Charge, Majority Carrier Conduction