Silicon Hot-Carrier Diodes Schottky Barrier Diodes

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.

• The Schottky Barrier Construction Provides Ultra–Stable Characteristics by Eliminating the “Cat–Whisker” or “S–Bend” Contact

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)

• Very Low Capacitance – 1.0 pF @ VR = 20 V

• High Reverse Voltage – to 70 Volts

• Low Reverse Leakage – 200 nA (Max)